On 15 July 2026, Infineon Technologies AG introduced the RIC70115, a radiation-hardened gallium nitride (GaN) high-electron-mobility transistor (HEMT) driver for satellite and high-reliability space applications. The part is rated to 100 krad(Si) total ionizing dose and characterized for single-event effects up to 81.9 MeV·cm²/mg linear energy transfer, with the RIC70115 and RIC70115EVAL1 evaluation board available now.
The technical value is dense power conversion with space-grade resilience: GaN supports smaller, lighter, more efficient switching systems, while the rad-hard rating reduces failure risk under cosmic radiation. For lunar systems, this matters for power distribution, battery charging, thermal control, comms, robotics, and any architecture that must survive years without replacement under high-radiation, high-reliability constraints.
Ark action: track qualification status, especially any progression toward MIL-PRF-38535 Class V screening and DLA-certified supply; evaluate whether the 100 krad(Si) / 81.9 MeV·cm²/mg envelope fits lunar orbit, surface, and deep-space use cases; and benchmark against Infineon’s broader rad-hard GaN portfolio to identify upgrade paths for habitat microgrids, motor drives, and fault-tolerant power converters.