On 2026-08-18, EPC Space announced three new radiation-hardened eGaN power transistors for next-generation space computing: EPC7050PCSH, EPC7066PCSH, and EPC7065PCSH, packaged in plastic PQFN surface-mount form with backside thermal pads.[1] The devices are 15 V, 25 V, and 40 V parts, designed for high-performance power conversion, and the company says the 15 V EPC7050PCSH supports 101 A continuous current with a typical RDS(on) of 0.28 mΩ.[1] EPC Space also listed strong radiation tolerance targets: total ionizing dose above 1 Mrad, single-event effect LET of 85 MeV·cm^2/mg, and neutron tolerance above 4E15 n/cm^2.[1]
For lunar infrastructure, this is relevant because radiation tolerance is a core requirement for electronics that must survive long-duration operation without frequent replacement, especially in power conversion chains feeding computers, sensors, comms, and life-support subsystems.[1] Low on-resistance and high current capability mean less heat, higher efficiency, and smaller thermal-management burden, which is critical in sealed lunar habitats and surface assets where every watt and kilogram matter.[1] The shift to compact surface-mount GaN devices also supports higher power density, which can reduce system volume and improve redundancy in mission-critical controllers.[1]
The Ark team should monitor whether these parts move from engineering availability into broad space qualification, and whether independent radiation testing confirms EPC’s reported TID, SEE, and neutron ratings.[1] The team should also compare GaN-based conversion architectures against rad-hard silicon MOSFET baselines for habitat power buses, battery charging, radio systems, and compute racks, with emphasis on efficiency, thermal load, and failure modes under lunar radiation and dust-driven maintenance constraints.[1] If validated, these parts belong in the Ark’s reference stack for compact, repair-minimizing power electronics.