EPC Space expanded its rad-hard GaN portfolio with new radiation-hardened discrete FETs for space power conversion, including the EPC7001BSH and EPC7002ASH, both rated at 40 V and qualified above 1,000 krad(Si) with immunity to single-event effects up to LET 83.7 MeV·mg/cm^2; the company positions them as lower-cost, higher-efficiency alternatives to comparable rad-hard silicon MOSFETs.[1]
Technically, this matters because high-efficiency, low-loss switching components reduce heat load, shrink power electronics mass, and improve reliability in environments where maintenance is impossible; for lunar habitats, these devices support power conditioning, DC/DC conversion, battery management, and distributed loads that must survive radiation and long-duration unattended operation.[1][2]
Ark action: track EPC Space’s higher-voltage rad-hard line, especially the 300 V EPC7030MSH platform and the broader family spanning 40 V to 300 V, then benchmark whether these parts can reduce conversion losses, component count, and thermal margins in lunar surface power buses, habitat systems, and robotics.[2][3]