L3-CDH-STOR-NAND
ESSENTIAL
COMMAND CONTROL
Level 3 · hardware
3D NAND Flash Storage
Radiation-Hardened 3D NAND Flash Memory Array
High-density 3D NAND flash providing bulk data storage for operational and science data
Purpose
High-density 3D NAND flash providing bulk data storage for operational and science data
Context
Child of L2-CDH-STOR
Principles
- ▸3D NAND provides high storage density (TBs per device) for mission data archives
- ▸Wear leveling distributes writes evenly to extend flash endurance
- ▸Read-disturb management prevents data corruption from excessive reads
- ▸Block-level redundancy enables continued operation with failed blocks
Typical implementations
- ▸Samsung/SK Hynix 3D NAND with rad-hard controller wrapper
- ▸SEAKR solid-state recorder using flash storage
- ▸BAE Systems RAD-PAK flash memory modules
Lunar considerations
- ▸Total ionizing dose causes threshold voltage shifts degrading flash cell reliability
- ▸Single-event upsets require continuous data scrubbing
- ▸Flash endurance (write cycles) limits rewritable storage over 100-year mission
Specifications
Functional
| primary function | High-density 3D NAND flash providing bulk data storage for operational and science data |
Physical
| materials | 3D NAND flash chips, Rad-hard flash controller, ECC engine ASIC |
Interfaces
Provides
- High-density bulk data storage
Requires
- Power for flash array and controller (~10-30W)
Cite this entry
Lunar Ark Codex. "3D NAND Flash Storage" (L3-CDH-STOR-NAND). Retrieved 10 September 2026, from https://lunarark.com/entry/L3-CDH-STOR-NAND
Licensed CC-BY-SA 4.0. You may reuse and adapt this entry with attribution, under the same licence.