L3-CDH-STOR-MRAM
CRITICAL
COMMAND CONTROL
Level 3 · hardware
MRAM Non-Volatile Memory
Magnetoresistive RAM for Critical State Storage
MRAM providing radiation-tolerant non-volatile storage for critical system state data
Purpose
MRAM providing radiation-tolerant non-volatile storage for critical system state data
Context
Child of L2-CDH-STOR
Principles
- ▸MRAM immune to TID effects - magnetic storage unaffected by ionizing radiation
- ▸Unlimited write endurance (no wear-out mechanism unlike flash)
- ▸Non-volatile - retains data without power for safe mode recovery
- ▸Fast access time (ns) comparable to SRAM for real-time state storage
Typical implementations
- ▸Everspin STT-MRAM (40nm, 256Mb density)
- ▸Avalanche Technology STT-MRAM for space
- ▸Honeywell rad-hard MRAM products
Lunar considerations
- ▸MRAM is ideal for storing critical state that must survive power cycling
- ▸Lower density than flash limits MRAM to high-value data only
- ▸Radiation tolerance makes MRAM the most reliable non-volatile memory for 100-year mission
Specifications
Functional
| primary function | MRAM providing radiation-tolerant non-volatile storage for critical system state data |
Physical
| materials | STT-MRAM chips, Rad-hard memory controller |
Interfaces
Provides
- Critical state storage surviving power loss
Requires
- Power for MRAM (~2-5W)
Cite this entry
Lunar Ark Codex. "MRAM Non-Volatile Memory" (L3-CDH-STOR-MRAM). Retrieved 10 September 2026, from https://lunarark.com/entry/L3-CDH-STOR-MRAM
Licensed CC-BY-SA 4.0. You may reuse and adapt this entry with attribution, under the same licence.